STD35NF06 Datasheet, PDF (5/13 Pages) STMicroelectronics – N-channel 60V - 0.018Ω - 35A - DPAK STripFET™ II Power MOSFET

STD35NF06
Electrical characteristics
Table 6. Source drain diode
Symbol
Parameter
Test conditions
Min.
I_SD
I_SDM ⁽¹⁾
Source-drain current
Source-drain current
(pulsed)
V_SD ⁽²⁾ Forward on voltage
I_SD = 35A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time I_SD = 35A, di/dt = 100A/µs,
Reverse recovery charge V_DD = 20V, T_j = 150°C
Reverse recovery current (see Figure 14)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Typ.
75
170
4.5
Max. Unit
35
A
140 A
1.5 V
ns
µC
A
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