STD35NF06 Datasheet, PDF (3/13 Pages) STMicroelectronics – N-channel 60V - 0.018Ω - 35A - DPAK STripFET™ II Power MOSFET

STD35NF06
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
V_DS
V_DGR
V_GS
I_D
I_D
I_DM(1)
P_tot
dv/dt⁽²⁾
Drain-source voltage (V_GS = 0)
Drain-gate voltage (R_GS = 20 kΩ)
Gate- source voltage
Drain current (continuous) at T_C = 25°C
Drain current (continuous) at T_C = 100°C
Drain current (pulsed)
Total dissipation at T_C = 25°C
Derating Factor
Peak diode recovery avalanche energy
T_stg
Storage temperature
T_j
Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. I_SD ≤35A, di/dt ≤100A/µs, V_DD =V(_BR)DSS, T_j ≤T_JMAX
Value
60
60
± 20
35
24.5
140
80
0.53
5
-55 to 175
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
Table 2. Thermal data
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-to ambient max
T_J
Maximum lead temperature for soldering purpose
1.88
°C/W
100
°C/W
275
°C
Table 3. Avalanche characteristics
Symbol
Parameter
Avalanche Current, Repetitive Or Not-
I_AR
repetitive
(pulse width limited by T_j max)
Single pulse avalanche energy
E_AS
(starting T_j = 25 °C, I_D = I_AR, V_DD = 50 V)
Max value
Unit
17.5
A
130
mJ
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