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| STD35NF06 Datasheet, PDF (4/13 Pages) STMicroelectronics – N-channel 60V - 0.018Ω - 35A - DPAK STripFET™ II Power MOSFET | |||
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Electrical characteristics
2
Electrical characteristics
STD35NF06
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Drain-source
V(BR)DSS breakdown voltage
IDSS
Zero gate voltage
drain current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID = 250µA, VGS =0
60
V
VDS = Max rating
VDS = Max rating,
TC = 125°C
1
µA
10
µA
VGS = ± 20V
±100 nA
VDS = VGS, ID = 250µA
2
3
4
V
VGS = 10V, ID = 17.5A
0.018 0.020 â¦
Table 5.
Symbol
Dynamic
Parameter
Test conditions
gfs (1)
Ciss
Coss
Crss
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS > ID(on) x
RDS(on)max, ID = 17.5A
VDS = 25V, f = 1MHz,
VGS = 0
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 30V, ID = 27.5A
RG = 4.7⦠VGS = 10V
(see Figure 12)
Qg
Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 48V, ID = 55A,
VGS = 10V, RG = 4.7â¦
(see Figure 13)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Min. Typ. Max. Unit
13
S
1300
pF
300
pF
105
pF
20
ns
50
ns
36
ns
15
ns
44.5 60
nC
10.5
nC
17.5
nC
4/13
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