STD30N6LF6AG Datasheet, PDF (5/15 Pages) STMicroelectronics – Very low gate charge

STD30N6LF6AG
Symbol
Parameter
Table 7: Source-drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
ISD
ISDM⁽¹⁾
VSD⁽²⁾
trr
Qrr
IRRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0 V, ISD = 24 A
ISD = 24 A, di/dt = 100 A/µs,
VDD = 48 V, TJ = 150 °C (see
Figure 15: "Test circuit for
inductive load switching and
diode recovery times")
-
24 A
-
96 A
-
1.3 V
- 22.4
ns
- 22.2
nC
-
2
A
Notes:
(1) _{Current is limited by package.}
(2) _{Pulse test: pulse duration = 300 µs, duty cycle 1.5%.}
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