STD30N6LF6AG Datasheet, PDF (1/15 Pages) STMicroelectronics – Very low gate charge

STD30N6LF6AG
Automotive-grade N-channel 60 V, 19 mΩ typ., 24 A
STripFET™ F6 Power MOSFET in a DPAK package
Datasheet - production data
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
S(3)
Features
Order code
VDS RDS(on) max. ID
PTOT
STD30N6LF6AG 60 V 25 mΩ 24 A 40 W
• Designed for automotive applications and
AEC-Q101 qualified
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using the STripFET™ F6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low R_DS(on) in all
packages.
Order code
STD30N6LF6AG
AM01475v1_Tab
Table 1: Device summary
Marking
Package
30N6LF6
DPAK
Packing
Tape and Reel
June 2015
DocID028036 Rev 1
This is information on a product in full production.
1/15
www.st.com