STD30N6LF6AG Datasheet, PDF (4/15 Pages) STMicroelectronics – Very low gate charge

Electrical characteristics
STD30N6LF6AG
2
Electrical characteristics
(T_case = 25 °C unless otherwise specified)
Table 4: Static
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 250 µA
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage drain
current
Gate-body leakage current
Gate threshold voltage
Static drain-source on-
resistance
VGS = 0 V, VDS = 60 V
VGS = 0 V, VDS = 60 V,
Tcase = 125 °C
VDS = 0 V, VGS = ±20 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 12 A
VGS = 4.5 V, ID = 12 A
Min. Typ. Max. Unit
60
V
1
µA
100
±100 nA
1
2.5 V
19 25
mΩ
24 30
Symbol
Parameter
Ciss Input capacitance
Coss Output capacitance
Crss
Reverse transfer
capacitance
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
Table 5: Dynamic
Test conditions
VDS = 25 V, f = 1 MHz,
VGS = 0 V
VDD = 30 V, ID = 24 A,
VGS = 10 V (see Figure 14:
"Gate charge test circuit")
Min. Typ. Max. Unit
- 1320 -
- 88.5 -
pF
-
58
-
-
26
-
-
6
- nC
-
3.3
-
Symbol
Parameter
td(on)
tr
td(off)
Turn-on delay time
Rise time
Turn-off delay time
tf
Fall time
Table 6: Switching times
Test conditions
VDD = 30 V, ID = 12 A,
RG = 4.7 Ω, VGS = 10 V (see
Figure 13: "Switching times
test circuit for resistive load"
and Figure 18: "Switching time
waveform")
Min. Typ. Max. Unit
-
10
-
-
19
-
-
56
-
ns
-
7
-
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