STD2NK100Z Datasheet, PDF (5/16 Pages) STMicroelectronics – N-channel 1000 V, 6.25 Ω, 1.85 A, TO-220, DPAK, IPAK Zener-protected SuperMESH™ Power MOSFET

STD2NK100Z - STP2NK100Z - STU2NK100Z
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_r
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V_DD= 500 V, I_D= 0.9 A,
R_G=4.7 Ω, V_GS=10 V
(see Figure 16)
Min. Typ. Max. Unit
7.2
ns
6.5
ns
41.5
ns
32.5
ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD
I_SDM ⁽¹⁾
Source-drain current
Source-drain current
(pulsed)
V_SD ⁽²⁾ Forward on voltage
I_SD= 1.85 A, V_GS=0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD= 1.85 A, di/dt= 100 A/µs,
V_DD= 60 V
(see Figure 21)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD= 1.85 A, di/dt= 100 A/µs,
V_DD= 60 V, Tj=150 °C
(see Figure 21)
1. Pulse width limited by package
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
1.85 A
7.4 A
1.6 V
476
ns
1.6
µC
6.9
A
532
ns
1.9
µC
88
A
Table 9. Gate-source zener diode
Symbol
Parameter
Test conditions
BV_{GSO Gate-source breakdown}
(1) _voltage
I_GS = ±1mA (open drain)
Min. Typ. Max. Unit
30
V
1. The built in back-to-back zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated zener diodes thus avoid the
usage of external components.
5/16