STD2NK100Z Datasheet, PDF (4/16 Pages) STMicroelectronics – N-channel 1000 V, 6.25 Ω, 1.85 A, TO-220, DPAK, IPAK Zener-protected SuperMESH™ Power MOSFET

Electrical characteristics
STD2NK100Z - STP2NK100Z - STU2NK100Z
2
Electrical characteristics
(T_CASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min. Typ.
V_(BR)DSS
Drain-source breakdown
voltage
I_DSS
Zero gate voltage drain
current (V_GS = 0)
I_GSS
V_GS(th)
R_DS(on)
Gate body leakage current
(V_DS = 0)
Gate threshold voltage
Static drain-source on
resistance
I_D = 1 mA, V_GS= 0
1000
V_DS = Max rating,
V_DS = Max rating,Tc=125 °C
V_GS = ± 30 V
V_DS= V_GS, I_D = 50 µA
3
V_GS= 10 V, I_D= 0.9 A
3.75
6.25
Max. Unit
V
1 µA
50 µA
±10 µA
4.5 V
8.5 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
g_fs ⁽¹⁾ Forward transconductance ^V_DS ^{=15 V, I}_D ^{= 0.9 A}
2.4
S
C_iss ^{Input capacitance}
499
pF
C_oss
C_rss
Output capacitance
Reverse transfer
capacitance
V_DS =25 V, f=1 MHz, V_GS=0
53
9
pF
pF
C_oss
(2)
eq.
Equivalent output
capacitance
V_GS =0, V_DS =0 to 800 V
28
pF
R_G Gate input resistance
f=1 MHz, open drain
6.6
Ω
Q_{g Total gate charge}
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD=800 V, I_D = 1.85 A
V_GS =10 V
(see Figure 17)
16
nC
3
nC
9
nC
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
2. C_{oss eq.} is defined as constant equivalent capacitance giving the same charging time as C_oss when V_DS
increases from 0 to 80% V_DSS
4/16