STD2NK100Z Datasheet, PDF (3/16 Pages) STMicroelectronics – N-channel 1000 V, 6.25 Ω, 1.85 A, TO-220, DPAK, IPAK Zener-protected SuperMESH™ Power MOSFET

STD2NK100Z - STP2NK100Z - STU2NK100Z
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS
Drain-source voltage (V_GS = 0)
V_GS
Gate-source voltage
I_D
Drain current (continuous) at T_C = 25 °C
I_D
Drain current (continuous) at T_C = 100 °C
I_DM ⁽¹⁾ Drain current (pulsed)
P_TOT Total dissipation at T_C = 25 °C
Derating factor
V_ESD(G-S) G-S ESD (HBM C=100 pF, R=1.5 kΩ)
dv/dt ^{(2) Peak diode recovery voltage slope}
T_j
Operating junction temperature
T_stg
Storage temperature
1. Pulse width limited by safe operating area
2. I_SD ≤ 1.85 A, di/dt ≤ 200 A/µs, V_DD = 80% V_(BR)DSS
Value
1000
± 30
1.85
1.16
7.4
70
0.56
3000
2.5
-55 to 150
Unit
V
V
A
A
A
W
W/°C
V
V/ns
°C
Table 3. Thermal data
Symbol
Parameter
Value
TO-220 IPAK
Unit
DPAK
R_thj-case
R_thj-pcb
R_thj-amb
T_l
Thermal resistance junction-case max
Thermal resistance junction-pcb minimum footprint
Thermal resistance junction-amb max
Maximum lead temperature for soldering purpose
--
62.5
1.79
--
50
100
300
°C/W
°C/W
°C/W
°C
Table 4. Avalanche data
Symbol
Parameter
I_AR ⁽¹⁾ Avalanche current, repetitive or not-repetitive
E_AS ⁽²⁾ Single pulse avalanche energy
1. Pulse width limited by Tjmax
2. Starting Tj = 25°C, I_D = I_AR, V_DD = 50V
Value
Unit
1.85
A
170
mJ
3/16