STD2NC45-1_09 Datasheet, PDF (5/13 Pages) STMicroelectronics – N-channel 450 V, 4.1 , 1.5 A, IPAK SuperMESH Power MOSFET

STD2NC45-1
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD Source-drain current
I_SDM ⁽¹⁾ Source-drain current (pulsed)
-
V_SD ⁽²⁾ Forward on voltage
I_SD = 1.5A, V_GS = 0
-
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 1.5A, di/dt = 100A/µs
V_DD = 100V, T_j = 150°C
-
(see Figure 21)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
1.5 A
6.0 A
1.6 V
225
ns
530
µC
4.7
A
Doc ID 9103 Rev 4
5/13