STD2NC45-1_09 Datasheet, PDF (3/13 Pages) STMicroelectronics – N-channel 450 V, 4.1 , 1.5 A, IPAK SuperMESH Power MOSFET

STD2NC45-1
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS
V_GS
I_D
I_D
I_DM ⁽¹⁾
P_TOT
dv/dt ⁽²⁾
Drain-source voltage (V_GS = 0)
Gate- source voltage
Drain current (continuous) at T_C = 25°C
Drain current (continuous) at T_C = 100°C
Drain current (pulsed)
Total dissipation at T_C = 25°C
Derating factor
Peak diode recovery voltage slope
T_stg
Storage temperature
T_j
Max. operating junction temperature
1. Pulse width limited by safe operating area
2. I_SD < 0.5A, di/dt < 100 A/µs, V_DD =80% V_(BR)DSS
Table 3. Thermal data
Symbol
Parameter
Rthj-case
Rthj-amb
T_l
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
Table 4. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
I_AS
(pulse width limited by Tj Max)
Single pulse avalanche energy
E_AS
(starting Tj=25°C, I_D=I_AS, V_DD=50V)
Value
450
±30
1.5
0.95
6
30
0.24
3
–65 to 150
Unit
V
V
A
A
A
W
W/°C
V/ns
°C
°C
Value
4.1
100
275
Unit
°C/W
°C/W
°C
Value
Unit
1.5
A
25
mJ
Doc ID 9103 Rev 4
3/13