STD2NC45-1_09 Datasheet, PDF (4/13 Pages) STMicroelectronics – N-channel 450 V, 4.1 , 1.5 A, IPAK SuperMESH Power MOSFET

Electrical characteristics
2
Electrical characteristics
STD2NC45-1
(T_CASE = 25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Drain-source
V_{(BR)DSS breakdown voltage}
I_DSS
I_GSS
V_GS(th)
R_DS(on)
Zero gate voltage
Drain current (V_GS = 0)
Gate-body leakage
current (V_DS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
I_D = 250µA, V_GS = 0
450
V
V_DS = Max rating
V_DS = Max rating, T_C = 125°C
1 µA
50 µA
V_GS = ± 30V
±100 nA
V_DS = V_GS, I_D = 250µA
2.3 3 3.7 V
V_GS = 10V, I_D = 0.5A
4.1 4.5 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
g_fs ⁽¹⁾
Forward transconductance ^{VDS > ID(on) x RDS(on)max,}
I_D = 0.5A
- 1.1
S
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS = 25V, f = 1 MHz, V_GS = 0 -
160
27.5
4.7
pF
pF
pF
Q_g Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD = 360V, I_D = 1.5A,
V_GS = 10V, R_G = 4.7Ω
(see Figure 17)
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
7
nC
- 1.3 10 nC
3.2
nC
Table 7. Switching times
Symbol
Parameter
t_d(on)
t_r
t_r(Voff)
t_f
t_c
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
Cross-over time
Test conditions
V_DD = 225V, I_D = 0.5A
R_G = 4.7Ω V_GS = 10V
(see Figure 16)
V_DD = 360V, I_D = 1.5A,
R_G = 4.7Ω, V_GS = 10V
(see Figure 16)
Min. Typ. Max. Unit
6.7
ns
-
-
4
ns
8.5
ns
- 12 - ns
18
ns
4/13
Doc ID 9103 Rev 4