STD2LN60K3 Datasheet, PDF (5/20 Pages) STMicroelectronics – N-channel 600 V, 4typ., 2 A SuperMESH3 Power MOSFET in DPAK, TO-220FP and IPAK packages

STD2LN60K3, STF2LN60K3, STU2LN60K3
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
V_DD = 300 V, I_D =1 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 17)
Min. Typ. Max. Unit
10
ns
8.5
ns
-
-
23.5
ns
21
ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 2 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 2 A, di/dt = 100 A/µs
V_DD = 60 V (see Figure 22)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 2 A, di/dt = 100 A/µs
V_DD = 60 V, T_j = 150 °C
(see Figure 22)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
2A
-
8A
-
1.5 V
200
ns
- 800
nC
8
A
230
ns
- 950
nC
8.5
A
Table 9. Gate-source Zener diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
BV_GSO(1)
Gate-source breakdown
voltage
Igs= ± 1 mA (open drain)
30
-
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Doc ID 023500 Rev 1
5/20