STD2LN60K3 Datasheet, PDF (1/20 Pages) STMicroelectronics – N-channel 600 V, 4typ., 2 A SuperMESH3 Power MOSFET in DPAK, TO-220FP and IPAK packages

STD2LN60K3, STF2LN60K3,
STU2LN60K3
N-channel 600 V, 4 Ω typ., 2 A SuperMESH3™ Power MOSFET
in DPAK, TO-220FP and IPAK packages
Datasheet — production data
Features
Order codes
V_DSS
R_DS(on)
max
I_D
STD2LN60K3
STF2LN60K3 600 V < 4.5 Ω 2 A
STU2LN60K3
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Very low intrinsic capacitance
■ Improved diode reverse recovery
characteristics
■ Zener-protected
P_TOT
45 W
20 W
45 W
Applications
■ Switching applications
TAB
3
1
DPAK
TAB
3
2
1
TO-220FP
3
2
1
IPAK
Figure 1. Internal schematic diagram
D(2,TAB)
Description
These SuperMESH3™ Power MOSFETs are the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
These devices boast an extremely low on-
resistance, superior dynamic performance and
high avalanche capability, rendering them suitable
for the most demanding applications.
G(1)
S(3)
AM01476v1
Table 1. Device summary
Order codes
STD2LN60K3
STF2LN60K3
STU2LN60K3
Marking
2LN60K3
Package
DPAK
TO-220FP
IPAK
Packaging
Tape and reel
Tube
July 2012
This is information on a product in full production.
Doc ID 023500 Rev 1
1/20
www.st.com
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