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STD2LN60K3 Datasheet, PDF (4/20 Pages) STMicroelectronics – N-channel 600 V, 4typ., 2 A SuperMESH3 Power MOSFET in DPAK, TO-220FP and IPAK packages
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Electrical characteristics
STD2LN60K3, STF2LN60K3, STU2LN60K3
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on
Zero gate voltage
VDS = 600 V
drain current (VGS = 0) VDS = 600 V, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
Gate threshold voltage VDS = VGS, ID = 50 µA
Static drain-source on-
resistance
VGS = 10 V, ID = 1 A
Min. Typ. Max. Unit
600
V
1 µA
50 µA
± 10 µA
3 3.75 4.5 V
4
4.5 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz, VGS = 0 -
235
22
3.5
pF
- pF
pF
Co(tr)(1)
Co(er)(2)
Eq. capacitance time
related
Eq. capacitance
energy related
VGS = 0, VDS = 0 to 480 V
-
14
- pF
-
10
- pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
7
-
Ω
Qg
Total gate charge
VDD = 480 V, ID = 1 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 18)
12
nC
-
1.8
- nC
7.7
nC
1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS
2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS
4/20
Doc ID 023500 Rev 1
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