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| STD2HNK60Z Datasheet, PDF (5/16 Pages) STMicroelectronics – N-channel 600V - 4.4Ω - 2A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESH™ Power MOSFET | |||
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STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
td(off)
tf
Turn-off Delay Time
Fall Time
Test Condictions
VDD=300V, ID=1.0A,
RG=4.7â¦, VGS=10V
(see Figure 17)
VDD=300V, ID=1.0A,
RG=4.7â¦, VGS=10V
(see Figure 17)
Min. Typ. Max. Unit
10
ns
30
ns
23
ns
50
ns
Table 7. Source drain diode
Symbol
Parameter
Test Condictions
ISD
ISDM(1)
Source-drain Current
Source-drain Current
(pulsed)
VSD(2) Forward on Voltage
ISD=2.0A, VGS=0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD=2.0A, di/dt = 100A/µs,
VDD=20 V, Tj=25°C
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD=2.0A, di/dt = 100A/µs,
VDD=20 V, Tj=150°C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit
2.0 A
8.0 A
1.3 V
178
ns
445
nC
5
A
200
ns
500
nC
5
A
5/16
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