STD2HNK60Z Datasheet, PDF (3/16 Pages) STMicroelectronics – N-channel 600V - 4.4Ω - 2A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESH™ Power MOSFET

STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
IPAK/DPAK TO-220FP TO-92
V_DS
V_DGR
V_GS
I_D
I_D
I_DM(1)
P_TOT
Drain-Source Voltage (V_GS = 0)
Drain-gate Voltage (R_GS = 20kΩ)
Gate-Source Voltage
Drain Current (continuous) at T_C = 25°C
Drain Current (continuous) at T_C=100°C
Drain Current (pulsed)
Total Dissipation at T_C = 25°C
Derating Factor
V_ESD(G-S) Gate Source ESD (HBM-C=100pF, R=1.5kΩ)
V_ISO Insulation withstand voltage (DC)
dv/dt⁽²⁾ Peak Diode Recovery voltage slope
T_J Operating Junction Temperature
T_stg Storage Temperature
T_l
Maximum lead temperature for soldering
purpose
2.0
1.26
8
45
0.36
--
600
600
±30
2.0
1.26
8
20
0.16
2000
2500
4.5
-55 to 150
V
V
V
0.5 A
0.32 A
2
A
3
W
0.025 W/°C
V
--
V
V/ns
°C
300
260 °C
1. Pulse width limited by safe operating area
2. I_SD ≤2A, di/dt ≤200A/µs, V_DD =80%V_(BR)DSS
Table 2. Thermal data
R_thj-case
R_thj-amb
R_thj-lead
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Thermal resistance junction-lead Max
IPAK/DPAK TO-220FP TO-92
2.77
6.25
-- °C/W
100
62.5
120 °C/W
--
--
40 °C/W
Table 3. Avalanche data
Symbol
Parameter
Value
Unit
I_AR
Avalanche current, repetitive or not repetitive
(pulse width limited by Tjmax)
2
A
E_AS
Single pulse avalanche energy (starting
Tj=25°C, I_D=I_AR, V_DD=50V)
120
mJ
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