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| STD2HNK60Z Datasheet, PDF (4/16 Pages) STMicroelectronics – N-channel 600V - 4.4Ω - 2A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESH™ Power MOSFET | |||
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Electrical characteristics
STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test Condictions
Min. Typ. Max. Unit
V(BR)DSS
Drain-Source Breakdown
Voltage
ID = 1mA, VGS= 0
600
V
IDSS
Zero Gate Voltage Drain
Current (VGS = 0)
VDS = Max Rating,
VDS = Max Rating,Tc=125°C
1 µA
50 µA
IGSS
Gate Body Leakage Current
(VDS = 0)
VGS = ±20V
±10 nA
VGS(th) Gate Threshold Voltage
VDS= VGS, ID = 50µA
3 3.75 4.5 V
RDS(on)
Static Drain-Source On
Resistance
VGS= 10V, ID= 1.0A
4.4 4.8 â¦
Table 5. Dynamic
Symbol
Parameter
Test Condictions
Min. Typ. Max. Unit
gfs (1) Forward Transconductance VDS =15V, ID = 1.0A
1.5
S
Ciss Input Capacitance
280
pF
Coss
Crss
Output Capacitance
Reverse Transfer
Capacitance
VDS =25V, f=1 MHz, VGS=0
38
7
pF
pF
Coss
(2)
eq
Equivalent Output
Capacitance
VGS=0, VDS =0V to 480V
30
pF
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=480V, ID = 2.0A
VGS =10V
(see Figure 18)
11 15 nC
2.25
nC
6
nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/16
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