STD27N3LH5 Datasheet, PDF (5/21 Pages) STMicroelectronics – N-channel 30 V, 0.014, 27 A, DPAK, IPAK, TO-220 STripFET V Power MOSFET

STD27N3LH5, STP27N3LH5, STU27N3LH5
Electrical characteristics
Table 6. Switching on/off (resistive load)
Symbol
Parameter
Test conditions
Min.
t_d(on)
t_r
Turn-on delay time
Rise time
t_d(off)
t_f
Turn-off delay time
Fall time
V_DD = 15 V, I_D = 13.5 A,
R_G = 4.7 Ω, V_GS = 10 V
-
(Figure 15 and Figure 20)
V_DD = 15 V, I_D = 13.5 A,
R_G = 4.7 Ω, V_GS = 10 V
-
(Figure 15 and Figure 20)
Typ.
4
22
13
2.8
Max. Unit
ns
-
ns
ns
-
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM ⁽¹⁾
Source-drain current
Source-drain current
(pulsed)
V_SD Forward on voltage
I_SD = 13.5 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 27 A, di/dt = 100
A/µs, V_DD = 25 V
(Figure 17)
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
Min. Typ. Max. Unit
27 A
-
108 A
-
1.1 V
16.2
ns
-
7.8
nC
1
A
Doc ID 15617 Rev 3
5/21