STD27N3LH5 Datasheet, PDF (4/21 Pages) STMicroelectronics – N-channel 30 V, 0.014, 27 A, DPAK, IPAK, TO-220 STripFET V Power MOSFET

Electrical characteristics
STD27N3LH5, STP27N3LH5, STU27N3LH5
2
Electrical characteristics
(T_CASE = 25 °C unless otherwise specified)
Table 4. Static
Symbol
Parameter
Test conditions
V_(BR)DSS
Drain-source
breakdown Voltage
I_D = 250 µA, V_GS= 0
I_DSS
I_GSS
V_GS(th)
R_DS(on)
Zero gate voltage
V_DS = 30 V
drain current (V_GS = 0) _{VDS = 30 V, Tc = 125 °C}
Gate body leakage
current
(V_DS = 0)
V_GS = ± 22 V
Gate threshold voltage V_DS = V_GS, I_D = 250 µA
Static drain-source on
resistance
V_GS = 10 V, I_D= 13.5 A
SMD version
V_GS = 4.5 V, I_D= 13.5 A
SMD version
Min. Typ. Max. Unit
30
V
1 µA
10 µA
±100 nA
1
2.5 V
0.015 0.020 Ω
0.014 0.019 Ω
0.021 0.028 Ω
0.020 0.027 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
Q_gs1
Q_gs2
R_G
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS = 25 V, f = 1 MHz,
V_GS = 0
Total gate charge
Gate-source charge
Gate-drain charge
V_DD = 15 V, I_D = 27 A
V_GS = 5 V
(Figure 16)
Pre V_th gate-to-source
charge
Post V_th gate-to-
source charge
V_DD = 15 V, I_D = 27 A
V_GS = 5 V
(Figure 21)
f = 1 MHz gate bias = 0 test
Gate input resistance signal level = 20 mV
open drain
Min Typ. Max. Unit
475
-
97
19
pF
-
pF
pF
4.6
nC
-
1.7
-
nC
1.9
nC
0.67
nC
-
-
0.84
nC
-
2.5
-
Ω
4/21
Doc ID 15617 Rev 3