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STD27N3LH5 Datasheet, PDF (3/21 Pages) STMicroelectronics – N-channel 30 V, 0.014, 27 A, DPAK, IPAK, TO-220 STripFET V Power MOSFET
STD27N3LH5, STP27N3LH5, STU27N3LH5
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS = 0)
VGS
ID (1)
Gate-Source voltage
Drain current (continuous) at TC = 25 °C
ID
IDM (2)
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
Derating factor
EAS (3) Single pulse avalanche energy
TJ
Operating junction temperature
Tstg Storage temperature
1. Limited by wire bonding
2. Pulse width limited by safe operating area
3. Starting TJ = 25 °C, ID = 21 A, L= 0.2 mH
Value
DPAK, IPAK
TO-220
30
± 22
27
19
108
30
45
0.2
50
- 55 to 175
Unit
V
V
A
A
A
W
W/°C
mJ
°C
Table 3. Thermal resistance
Symbol
Parameter
Value
DPAK, IPAK
TO-220
RthJC
RthJA
TJ
Thermal resistance junction-case max
Thermal resistance junction-case max
Maximum lead temperature for soldering
purpose
5
3.33
100
275
Unit
°C/W
°C/W
°C
Doc ID 15617 Rev 3
3/21