STD13NM60N Datasheet, PDF (5/21 Pages) STMicroelectronics – N-channel 600 V, 0.28 Ω typ., 11 A MDmesh™ II Power MOSFET in TO-220FP, I²PAK, TO-220, IPAK, TO-247 packages

STF/I/P/U/W13NM60N
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V_DD = 300 V, I_D = 5.5 A
R_G = 4.7 Ω V_GS = 10 V
(see Figure 19)
Min. Typ. Max. Unit
3
ns
8
ns
-
-
30
ns
10
ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min Typ. Max. Unit
I_SD Source-drain current
I_SDM ⁽¹⁾ Source-drain current (pulsed)
-
V_SD ⁽²⁾ Forward on voltage
I_SD = 11 A, V_GS = 0
-
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 11 A, di/dt = 100 A/µs
V_DD = 100 V
-
(see Figure 21)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 11 A, di/dt = 100 A/µs
V_DD = 100 V, T_j = 150 °C
-
(see Figure 21)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
11 A
44 A
1.5 V
230
ns
2
µC
18
A
290
ns
190
µC
17
A
Doc ID 15420 Rev 5
5/21