STD13NM60N Datasheet, PDF (1/21 Pages) STMicroelectronics – N-channel 600 V, 0.28 Ω typ., 11 A MDmesh™ II Power MOSFET in TO-220FP, I²PAK, TO-220, IPAK, TO-247 packages

STF13NM60N, STI13NM60N, STP13NM60N,
STU13NM60N, STW13NM60N
N-channel 600 V, 0.28 Ω typ., 11 A MDmesh™ II Power MOSFET
in TO-220FP, I²PAK, TO-220, IPAK, TO-247 packages
Datasheet — production data
Features
Order codes
STF13NM60N
STI13NM60N
STP13NM60N
STU13NM60N
STW13NM60N
V_DSS
(@Tjmax)
650 V
R_DS(on)
max
< 0.36 Ω
I_D
11 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
TAB
3
2
1
TO-220FP
123
I²PAK
TAB
TAB
3
2
1
TO-220
3
2
1
IPAK
3
2
1
TO-247
Applications
■ Switching applications
Description
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
Figure 1. Internal schematic diagram
$OR4!"
'
3
3#
Table 1. Device summary
Order codes
STF13NM60N
STI13NM60N
STP13NM60N
STU13NM60N
STW13NM60N
Marking
13NM60N
Packages
TO-220FP
I²PAK
TO-220
IPAK
TO-247
Packaging
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November 2012
This is information on a product in full production.
Doc ID 15420 Rev 5
1/21
www.st.com
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