STD13NM60N Datasheet, PDF (4/21 Pages) STMicroelectronics – N-channel 600 V, 0.28 Ω typ., 11 A MDmesh™ II Power MOSFET in TO-220FP, I²PAK, TO-220, IPAK, TO-247 packages

Electrical characteristics
2
Electrical characteristics
STF/I/P/U/W13NM60N
(T_CASE = 25 °C unless otherwise specified)
Table 5.
Symbol
On/off states
Parameter
Test conditions
Drain-source
V_{(BR)DSS breakdown voltage (VGS = 0)} I_D = 1 mA
Zero gate voltage
I_{DSS drain current (VGS = 0)}
V_DS = 600 V
V_DS = 600 V, T_C=125 °C
I_GSS
Gate-body leakage
current (V_DS = 0)
V_GS = ± 25 V
V_GS(th) Gate threshold voltage
V_DS = V_GS, I_D = 250 µA
Static drain-source
R_{DS(on) on-resistance}
V_GS = 10 V, I_D = 5.5 A
Min. Typ. Max. Unit
600
V
1 µA
100 µA
±0.1 µA
2
3
4
V
0.28 0.36 Ω
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS = 50 V, f = 1 MHz,
V_GS = 0
790
pF
- 60 - pF
3.6
pF
C_{oss eq.} ⁽¹⁾
Equivalent output
capacitance
V_GS = 0, V_DS = 0 to 480 V
- 135 - pF
Q_g Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD = 480 V, I_D = 11 A,
V_GS = 10 V,
(see Figure 20)
27
nC
-
4
- nC
14
nC
R_G Gate input resistance
f=1 MHz open drain
- 4.7 - Ω
1. C_{oss eq.} is defined as a constant equivalent capacitance giving the same charging time as C_oss when V_DS
increases from 0 to 80% V_DS
4/21
Doc ID 15420 Rev 5