STD11NM60ND Datasheet, PDF (5/18 Pages) STMicroelectronics – N-channel 600V - 0.37Ω - 10A - FDmesh™ II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK

STP11NM60ND - STF/I11NM60ND - STU11NM60ND - STD11NM60ND Electrical characteristics
Table 7. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V_DD = 300 V, I_D = 5 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 18)
Min Typ Max Unit
16
ns
7
ns
50
ns
9
ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min Typ Max Unit
I_SD
I_SDM ⁽¹⁾
V_SD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 10 A, V_GS=0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD =10 A, di/dt =100 A/µs,
V_DD = 100 V
(see Figure 20)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
V_DD = 100 V
di/dt =100 A/µs, I_SD = 10 A
Tj = 150 °C (see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
10 A
40 A
1.3 V
130
ns
0.69
µC
11
A
200
ns
1.2
µC
12
A
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