STD11NM60ND Datasheet, PDF (1/18 Pages) STMicroelectronics – N-channel 600V - 0.37Ω - 10A - FDmesh™ II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK

STD11NM60ND, STF/I11NM60ND
STP11NM60ND, STU11NM60ND
N-channel 600V - 0.37Ω - 10A - FDmesh™ II Power MOSFET
I²PAK, TO-220, TO-220FP, IPAK, DPAK
Features
Type
V_DSS (@Tjmax) R_DS(on) max I_D
STD11NM60ND
STF11NM60ND
STI11NM60ND
STP11NM60ND
STU11NM60ND
650 V
650 V
650 V
650 V
650 V
< 0.45 Ω
< 0.45 Ω
< 0.45 Ω
< 0.45 Ω
< 0.45 Ω
10 A
10 A⁽¹⁾
10 A
10 A
10 A
1. Limited only by maximum temperature allowed
■ The worldwide best R_DS(on)* area amongst the
fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche
capabilities
Application
■ Switching applications
3
1
DPAK
3
2
1
TO-220
3
2
1
IPAK
123
I²PAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Description
The FDmesh™ II series belongs to the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout
and associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.It is therefore strongly
recommended for bridge topologies, in particular
ZVS phase-shift converters.
Table 1. Device summary
Order codes
Marking
STD11NM60ND
STF11NM60ND
STI11NM60ND
STP11NM60ND
STU11NM60ND
April 2008
11NM60ND
11NM60ND
11NM60ND
11NM60ND
11NM60ND
Rev 1
Package
DPAK
TO-220FP
I²PAK
TO-220
IPAK
Packaging
Tape and reel
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