STD11NM60ND Datasheet, PDF (3/18 Pages) STMicroelectronics – N-channel 600V - 0.37Ω - 10A - FDmesh™ II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK

STP11NM60ND - STF/I11NM60ND - STU11NM60ND - STD11NM60ND
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
DPAK/I²PAK TO-
220/IPAK
TO-220FP
Unit
V_DS Drain-source voltage (V_GS=0)
V_GS Gate-source voltage
I_D Drain current (continuous) at T_C = 25°C
I_D Drain current (continuous) at T_C = 100°C
I_DM ⁽²⁾ Drain current (pulsed)
P_TOT Total dissipation at T_C = 25°C
dv/dt ^{(3) Peak diode recovery voltage slope}
V_ISO
T_stg
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s;T_C=25°C)
Storage temperature
T_j Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I_SD ≤ 10 A, di/dt ≤ 400 A/µs, V_DD = 80% V_(BR)DSS
Table 3. Thermal data
600
± 25
10
6.3
40
90
40
10 ⁽¹⁾
6.3⁽¹⁾
40 ⁽¹⁾
25
--
2500
-55 to 150
150
V
V
A
A
A
W
V/ns
V
°C
°C
Symbol
Parameter
Value
Unit
TO-220 I²PAK DPAK IPAK TO-220FP
R_thj-case
Thermal resistance junction-case
max
1.38
R_thj-amb Thermal resistance junction-amb max
62.5
-- 100
R_thj-pcb Thermal resistance junction-pcb max --
-- 50 --
T_l
Maximum lead temperature for
soldering purposes
300
5
°C/W
62.5 °C/W
--
°C/W
°C
Table 4. Avalanche characteristics
Symbol
Parameter
I_{AS Avalanche current, repetitive or not-repetitive}⁽¹⁾
E_{AS Single pulse avalanche energy} ⁽²⁾
1. Pulse width limited by Tj max
2. starting Tj= 25 °C, I_D=I_AS, V_DD= 50 V
Max value
3.5
200
Unit
A
mJ
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