STD11NM60N Datasheet, PDF (5/17 Pages) STMicroelectronics – N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET

STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V_DD=300V, I_D=5A,
R_G=4.7Ω, V_GS=10V
(see Figure 17)
Min Typ Max Unit
22
ns
18.5
ns
50
ns
12
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM
V_SD(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 10A, V_GS=0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD=10A, di/dt =100A/µs,
V_DD=100V, Tj=25°C
(see Figure 22)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
V_DD=100V
di/dt =100A/µs, I_SD=10A
Tj=150°C (see Figure 22)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min Typ Max Unit
10 A
40 A
1.3 V
340
ns
3.26
µC
19.2
A
460
ns
4.42
µC
19.2
A
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