STD11NM60N Datasheet, PDF (1/17 Pages) STMicroelectronics – N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET

STD11NM60N - STD11NM60N-1
STP11NM60N - STF11NM60N
N-channel 600V - 0.37Ω - 10A - TO-220 - TO-220FP- IPAK - DPAK
Second generation MDmesh™ Power MOSFET
General features
Type
V_DSS
(@Tjmax)
R_DS(on)
I_D
STD11NM60N
STD11NM60N-1
STF11NM60N
STP11NM60N
650V
650V
650V
650V
<0.45Ω
<0.45Ω
<0.45Ω
<0.45Ω
10A
10A
10A ⁽¹⁾
10A
1. Limited only by maximum temperature allowed
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistancel
Description
This series of devices is realized with the second
generation of MDmesh™ Technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters
Applications
■ Switching application
3
2
1
TO-220
3
2
1
IPAK
3
1
DPAK
3
2
1
TO-220FP
Internal schematic diagram
Order codes
Part number
STD11NM60N-1
STD11NM60N
STP11NM60N
STF11NM60N
Marking
D11NM60N
D11NM60N
P11NM60N
F11NM60N
Package
IPAK
DPAK
TO-220
TO-220FP
Packaging
Tube
Tape & reel
Tube
Tube
November 2006
Rev 2
1/17
www.st.com
17