STD11NM60N Datasheet, PDF (3/17 Pages) STMicroelectronics – N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET

STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
V_DS
Drain-source voltage (V_GS=0)
V_GS
Gate-source voltage
I_D
Drain current (continuous) at T_C = 25°C
I_D
Drain current (continuous) at T_C = 100°C
I_DM ⁽²⁾ Drain current (pulsed)
P_TOT Total dissipation at T_C = 25°C
Derating factor
dv/dt ^{(3) Peak diode recovery voltage slope}
V_ISO
T_j
T_stg
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1s;T_C=25°C)
Operating junction temperature
Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I_SD ≤10A, di/dt ≤400A/µs, V_DD =80% V_(BR)DSS
Value
TO-220/
Unit
TO-220FP
DPAK/IPAK
600
V
± 25
V
10
10⁽¹⁾
A
6.3
6.3 ⁽¹⁾
A
40
40⁽¹⁾
A
100
25
0.8
0.2
15
W
W/°C
V/ns
--
2500
V
-55 to 150
°C
Table 2. Thermal data
TO-220 DPAK/IPAK TO-220FP Unit
Rthj-case
Rthj-amb
T_l
Thermal resistance junction-case Max
Thermal resistance junction-amb Max
Maximum lead temperature for soldering
purpose
1.25
62.5
100
300
5
°C/W
62.5 °C/W
°C
Table 3. Avalanche characteristics
Symbol
Parameter
I_AS
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
Single pulse avalanche energy
E_AS
(starting Tj=25°C, I_D=I_AS, V_DD= 50V)
Max value
Unit
3.5
A
200
mJ
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