STD10NF10 Datasheet, PDF (5/14 Pages) STMicroelectronics – N-CHANNEL 100V - 0.115 ohm - 13A IPAK/DPAK LOW GATE CHARGE STripFET™ II POWER MOSFET

STD10NF10
Electrical characteristics
Table 6. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM ⁽¹⁾
V_SD(2)
t_rr
Q_rr
I_RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 10A, V_GS = 0
I_SD = 10A,
di/dt = 100A/µs,
V_DD = 50V, T_J = 150°C
Figure 15 on page 8
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
13 A
52 A
1.5 V
90
ns
230
µC
5
A
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