STD10NF10 Datasheet, PDF (3/14 Pages) STMicroelectronics – N-CHANNEL 100V - 0.115 ohm - 13A IPAK/DPAK LOW GATE CHARGE STripFET™ II POWER MOSFET

STD10NF10
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
V_DS Drain-source voltage (V_GS = 0)
V_DGR Drain-gate voltage (R_GS = 20KΩ)
V_GS Gate-source voltage
I_D Drain current (continuous) at T_C = 25°C
I_D Drain current (continuous) at T_C=100°C
I_DM ⁽¹⁾ Drain current (pulsed)
P_TOT Total dissipation at T_C = 25°C
Derating factor
E_AS ⁽²⁾ Single pulse avalanche energy
dv/dt ^{(3) Peak diode recovery voltage slope}
T_stg Storage temperature
T_J Max. operating junction temperature
1. Pulse width limited by safe operating area
2. Starting T_J = 25 ^oC, I_D = 15A, V_DD = 50V
3. I_SD ≤13A, di/dt ≤300 A/µs, V_DS ≤V_(BR)DSS, T_J ≤T_JMAX
Table 2. Thermal data
Symbol
Parameter
R_thJC
R_thJA
T_l
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering
purpose
Electrical ratings
Value
100
100
± 20
13
9
52
50
0.33
70
9
-55 to 175
Unit
V
V
V
A
A
A
W
W/°C
mJ
V/ns
°C
Value
3.0
100
300
Unit
°C/W
°C/W
°C
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