STD10NF10 Datasheet, PDF (4/14 Pages) STMicroelectronics – N-CHANNEL 100V - 0.115 ohm - 13A IPAK/DPAK LOW GATE CHARGE STripFET™ II POWER MOSFET

Electrical characteristics
2
Electrical characteristics
STD10NF10
(T_CASE = 25°C unless otherwise specified)
Table 3. On /off states
Symbol
Parameter
Test conditions
V_(BR)DSS
Drain-source breakdown
voltage
I_D = 250µA, V_GS = 0
I_DSS
Zero gate voltage drain
current (V_GS = 0)
V_DS = Max rating
V_DS = Max rating,
T_C = 125°C
I_GSS
Gate body leakage current
(V_DS = 0)
V_GS = ±20V
V_GS(th) Gate threshold voltage
V_DS= V_GS, I_D = 250µA
R_DS(on)
Static drain-source on
resistance
V_GS = 10V, I_D = 5A
Min. Typ. Max. Unit
100
V
1 µA
10 µA
±100 nA
2
3
4
V
0.115 0.13 Ω
Table 4. Dynamic
Symbol
Parameter
Test conditions
g_fs ⁽¹⁾ Forward transconductance V_DS = 15V_, I_D = 5A
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS = 25V, f = 1 MHz,
V_GS = 0
Q_{g Total gate charge}
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD = 80V, I_D = 10A
V_GS = 10V
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Table 5. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V_DD = 27V, I_D = 5A,
R_G = 4.7Ω, V_GS = 10V
Figure 13 on page 8
Min. Typ. Max. Unit
20
S
460
pF
70
pF
30
pF
15.3 ₂₁ nC
3.7
nC
4.7
nC
Min. Typ. Max. Unit
16
ns
25
ns
32
ns
8
ns
4/14