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STD100N3LF3_09 Datasheet, PDF (5/14 Pages) STMicroelectronics – N-channel 30 V, 0.0045 Ω, 80 A, DPAK planar STripFET™ II Power MOSFET
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STD100N3LF3
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD= 15 V, ID= 40 A,
RG=4.7Ω, VGS=10 V
Figure 15 on page 9
Min.
-
Typ.
9
205
31
35
Max. Unit
ns
ns
-
ns
ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
trr
Qrr
IRRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 40 A, VGS = 0
ISD = 80 A,
di/dt = 100 A/µs,
VDD = 25 V, TJ = 150 °C
Figure 17 on page 9
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
-
80 A
-
320 A
-
1.3 V
40
ns
-
40
µC
2
A
Doc ID 13206 Rev 3
5/14
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