STD100N3LF3_09 Datasheet, PDF (3/14 Pages) STMicroelectronics – N-channel 30 V, 0.0045 Ω, 80 A, DPAK planar STripFET™ II Power MOSFET

STD100N3LF3
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS
V_GS
I_D ⁽¹⁾
I_D
I_DM ⁽²⁾
P_TOT
Drain-source voltage (V_GS = 0)
Gate-source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C=100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Derating factor
dv/dt ^{(3) Peak diode recovery voltage slope}
T_stg Storage temperature
T_J Max. operating junction temperature
1. Current limited by package.
2. Pulse width limited by safe operating area
3. I_SD ≤80A, di/dt ≤360 A/µs, V_DS ≤V_(BR)DSS, T_J ≤T_JMAX
Table 3. Thermal data
Symbol
Parameter
R_thJC
R_thJA
T_l
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Table 4. Avalanche characteristics
Symbol
Parameter
Not-repetitive avalanche current
I_{AR (pulse width limited by TJ max)}
Single pulsed avalanche energy
E_{AS (starting TJ = 25 °C, ID = IAV, VDD = 24 V)}
Electrical ratings
Value
30
± 20
80
70
320
110
0.73
3.9
-55 to 175
Unit
V
V
A
A
A
W
W/°C
V/ns
°C
Value
1.36
100
275
Value
40
500
Unit
°C/W
°C/W
°C
Unit
A
mJ
Doc ID 13206 Rev 3
3/14