STD100N3LF3_09 Datasheet, PDF (4/14 Pages) STMicroelectronics – N-channel 30 V, 0.0045 Ω, 80 A, DPAK planar STripFET™ II Power MOSFET

Electrical characteristics
2
Electrical characteristics
STD100N3LF3
(T_CASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V_(BR)DSS
Drain-source breakdown
voltage
I_D = 250 µA, V_GS = 0
I_DSS
I_GSS
V_GS(th)
R_DS(on)
Zero gate voltage drain
current (V_GS = 0)
Gate body leakage current
(V_DS = 0)
Gate threshold voltage
Static drain-source on
resistance
V_DS = Max rating,
V_DS = Max rating @125 °C
V_GS = ±20 V
V_DS= V_GS, I_D = 250 µA
V_GS = 10 V, I_D = 40 A
V_GS = 5 V, I_D = 20 A
V_GS = 10 V,
I_D = 40 A @125 °C
V_GS = 5 V,
I_D = 20 A @125 °C
30
V
1 µA
10 µA
±200 nA
1
2.5 V
0.0045 0.0055 Ω
0.008 0.01 Ω
0.0068
Ω
0.0146
Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
g_fs ⁽¹⁾ Forward transconductance V_DS = 10 V_, I_D = 15 A
-
31
S
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS = 25 V, f = 1 MHz,
V_GS = 0
2060
- 728
67
pF
pF
pF
Q_g Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
R_G Gate input resistance
V_DD = 24 V, I_D = 80 A
V_GS = 5 V
-
Figure 16 on page 9
f = 1 MHz gate DC Bias = 0
test signal level = 20 mV
-
open drain
20 27 nC
7
nC
7.5
nC
1.9
Ω
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
4/14
Doc ID 13206 Rev 3