STC04IE170HV Datasheet, PDF (5/11 Pages) STMicroelectronics – Emitter switched bipolar transistor ESBT® 1700V - 4A - 0.17 W

STC04IE170HV
Electrical characteristics
Table 4. Electrical characteristics
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V_CC =V_Clamp =400V
V_CS(dyn)
Collector-source
dynamic voltage
(1µs)
V_GS =10V
I_B = 0.3A
I_C = 1.5A
t_peak =500ns
4.32
V
R_G =47Ω
I_Bpeak = 3A (2I_C )
Maximum collector-
V_CSW source voltage switched R_G =47Ω h_FE =5 I_C = 4A 1700
V
without snubber
Note (1) Pulsed duration = 300 µs, duty cycle ≤1.5%
2.1
Electrical characteristics (curves)
Figure 1. Output characteristics
Figure 2. Dynamic collector-source
saturation voltage
Figure 3. DC current gain
Figure 4. Gate threshold voltage vs
temperature
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