STC04IE170HV Datasheet, PDF (1/11 Pages) STMicroelectronics – Emitter switched bipolar transistor ESBT® 1700V - 4A - 0.17 W

STC04IE170HV
Emitter switched bipolar transistor
ESBT^® 1700V - 4A - 0.17 W
General features
Table 1. General features
V_CS(ON)
I_C
0.7V
4A
R_CS(ON)
0.17Ω
■ High voltage / high current cascode
configuration
■ Low equivalent on resistance
■ Very fast-switch, up to 150 kHz
■ Squared RBSOA, up to 1700 V
■ Very low C_ISS driven by R_G = 47 Ω
■ Very low turn-off cross over time
■ In compliance with the 2002/93/EC European
Directive
Description
The STC04IE170HV is manufactured in
Monolithic ESBT technology, aimed to provide
the best performance in High Frequency / High
voltage applications. It is designed for use in Gate
Driven based topologies.
Applications
■ Flyback / forward SMPS
■ Buck-bust converter
234
1
TO247-4L HV
Internal schematic diagrams
Order codes
Part Number
STC04IE170HV
Marking
C04IE170HV
Package
TO247-4L HV
Packing
Tube
September 2006
Rev 1
1/11
www.st.com
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