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| STC04IE170HV Datasheet, PDF (4/11 Pages) STMicroelectronics – Emitter switched bipolar transistor ESBT® 1700V - 4A - 0.17 W | |||
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Electrical characteristics
2
Electrical characteristics
STC04IE170HV
(Tcase = 25°C unless otherwise specified)
Table 4. Electrical characteristics
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ICS(SS)
Collector-source current
(VBS =VGS =0V)
VCS(SS) =1700V
IBS(OS)
Base-source current
(IC =0, VGS =0V)
VBS(OS) =30V
ISB(OS)
Source-base current
(IC =0, VGS =0V)
VSB(OS) =17V
Gate-source leakage
IGS(OS) (VBS =0V)
VGS = ± 17V
VCS(ON)
Collector-source ON
voltage
VGS =10V IC =4A IB =0.8A
VGS =10V IC =1.5A IB =0.15A
hFE DC current gain
VCS =1V VGS =10V IC =4A
4
VCS =1V VGS =10V IC =1.5A 7
VBS(ON)
Base-source ON
voltage
VGS =10V IC =4A IB =0.8A
VGS =10V IC =1.5A IB =0.15A
VGS(th) Gate threshold voltage VBS =VGS IB =250µA
2
Ciss Input capacitance
VCS =25V f =1MHz
VGS=0V
QGS(tot) Gate-source Charge
VGS=10V
ts
tf
INDUCTIVE LOAD
Storage time
Fall time
VGS =10V
VClamp =1360V
IC =2A
RG =47â¦
tp =4µs
IB =0.4A
ts
tf
INDUCTIVE LOAD
Storage time
Fall time
VGS =10V
VClamp =1360V
IC =2A
RG =47â¦
tp =4µs
IB =0.2A
VCS(dyn)
Collector-source
dynamic voltage
(500ns)
VCC =VClamp =400V
VGS =10V
IC =1.5A
IB = 0.3A
tpeak =500ns
RG =47â¦
IBpeak =3A (2IC )
100 µA
10 µA
100 µA
100 nA
0.7 1.5 V
0.6 1.4 V
5.5
11
1.3 1.5 V
0.9 1.1 V
3
4
V
510
pF
3.9
nC
770
ns
10
ns
410
ns
10
ns
5.36
V
4/11
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