STB9NK80Z Datasheet, PDF (5/15 Pages) STMicroelectronics – Extremely high dv/dt capability

STB9NK80Z
Electrical characteristics
Symbol
Table 7. Source drain diode
Parameter
Test conditions
I_SD
(1)
I_SDM
(2)
V_SD
Source-drain current
Source-drain current (pulsed)
Forward on voltage
t_rr Reverse recovery time
Q_rr Reverse recovery charge
I_RRM Reverse recovery current
I_SD = 5.2 A, V_GS = 0
I_SD = 5.2 A, di/dt = 100
A/μs
V_DD = 50 V, Tj = 150°C
(see Figure 20)
1. Pulsed: pulse duration=300μs, duty cycle 1.5%
2. Pulse width limited by safe operating area
Min. Typ. Max. Unit
5.2 A
-
20.8 A
-
1.6 V
- 530
ns
- 3.31
μC
- 12.5
A
Symbol
Table 8. Gate-source zener diode
Parameter
Test conditions
Min. Typ. Max. Unit
I_D= 0
V_{(BR) GSO} Gate-source breakdown voltage
30
V
I_GS= ± 1mA
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
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