STB9NK80Z Datasheet, PDF (1/15 Pages) STMicroelectronics – Extremely high dv/dt capability

STB9NK80Z
Automotive-grade N-channel 800 V, 1.5 Ω typ., 5.2 A
2
Zener-protected SuperMESH™ Power MOSFETs in D PAK package
Datasheet - production data
Features
TAB
3
1
D²PAK
Figure 1. Internal schematic diagram
'7$%
*
6
AM01476v1
Type
STB9NK80Z
V_DS
(@Tjmax)
800V
R_DS(on)
max.
1.8Ω
I_D
5.2A
• Designed for automotive applications and
AEC-Q101 qualified
• Extremely high dv/dt capability
• 100% avalanche tested
• Gate charge minimized
• Zener-protected
• Very low intrinsic capacitances
Applications
• Switching application
Description
This device is an N-channel Zener-protected
Power MOSFET developed using
STMicroelectronics' SuperMESH™ technology,
achieved through optimization of ST's well
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
Order codes
STB9NK80Z
Table 1. Device summary
Marking
Package
B9NK80Z
D²PAK
July 2013
This is information on a product in full production.
DocID024491 Rev 2
Packaging
Tape and reel
1/15
www.st.com
15