STB9NK80Z Datasheet, PDF (3/15 Pages) STMicroelectronics – Extremely high dv/dt capability

STB9NK80Z
1
Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
V_DS
V_GS
I_D
I_D
(1)
I_DM
P_TOT
ESD
(2)
dv/dt
Drain-source voltage
Gate- source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25°C
Derating factor
Gate-source human body model (C = 100 pF, R = 1.5 kΩ)
Peak diode recovery voltage slope
T_j
Max operating junction temperature
T_stg
Storage temperature
1. Pulse width limited by junction temperature.
2. I_SD ≤ 5.2 A, di/dt ≤ 200 A/μs, V_DD ≤ V_(BR)DSS
Value
800
± 30
5.2
3.3
20.8
125
1
4
4.5
Unit
V
V
A
A
A
W
W/°C
kV
V/ns
-55 to 150 °C
Symbol
R_thj-case
R_thj-amb
Table 3. Thermal data
Parameter
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Value
1
62.5
Unit
°C/W
°C/W
Symbol
Table 4. Avalanche characteristics
Parameter
Value
Unit
Avalanche current, repetitive or not-repetitive
I_AR
(pulse width limited by Tj Max)
Single pulse avalanche energy
E_AS
(starting T_J = 25 °C, I_D = I_AR, V_DD = 50 V)
5.2
A
210
mJ
DocID024491 Rev 2
3/15