STB80NF55-08T4 Datasheet, PDF (5/15 Pages) STMicroelectronics – N-channel 55 V, 0.0065 Ω, 80 A, TO-220, D2PAK, TO-247 STripFET™ Power MOSFET

STB80NF55-08T4, STP80NF55-08, STW80NF55-08
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM ⁽¹⁾
V_SD
t_rr(2)
Q_rr
I_RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 80 A, V_GS = 0
I_SD = 80 A,V_DD = 25 V
di/dt=100 A/µs,
T_j =150 °C
(see Figure 18)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min Typ. Max Unit
80 A
320 A
1.5 V
80
ns
230
nC
5.7
A
Doc ID 14511 Rev 2
5/15