STB80NF55-08T4 Datasheet, PDF (3/15 Pages) STMicroelectronics – N-channel 55 V, 0.0065 Ω, 80 A, TO-220, D2PAK, TO-247 STripFET™ Power MOSFET

STB80NF55-08T4, STP80NF55-08, STW80NF55-08
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS
V_GS
I_D ⁽¹⁾
I_D ⁽¹⁾
I_DM(2)
P_TOT
Drain-source voltage (V_GS = 0)
Gate- source voltage
Drain current (continuos) at T_C = 25 °C
Drain current (continuos) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Derating factor
T_j
Operating junction temperature
T_stg Storage temperature
1. Current limited package
2. Pulse width limited by safe operating area
Value
55
±20
80
80
320
300
2
-55 to 175
Unit
V
V
A
A
A
W
W/°C
°C
Table 3. Thermal resistance
Symbol
Parameter
R_thj-case Thermal resistance junction-case max
R_thj-amb Thermal resistance junction-ambient max
T_l
Maximum lead temperature for soldering
purpose
1. When mounted on 1 inch² FR-4 board, 2 oz Cu
D²PAK
35⁽¹⁾
Value
TO-220 TO-247
0.5
62.5
50
Unit
°C/W
°C/W
300
°C
Table 4. Avalanche characteristics
Symbol
Parameter
Max value
Unit
Avalanche current, repetitive or not-repetitive
I_AR
(pulse width limited by T_j max)
40
A
Single pulse avalanche energy
E_AS
(starting T_j = 25 °C, I_D = I_AR, V_DD = 30 V)
1000
mJ
Doc ID 14511 Rev 2
3/15