STB80NF55-08T4 Datasheet, PDF (4/15 Pages) STMicroelectronics – N-channel 55 V, 0.0065 Ω, 80 A, TO-220, D2PAK, TO-247 STripFET™ Power MOSFET

Electrical characteristics
STB80NF55-08T4, STP80NF55-08, STW80NF55-08
2
Electrical characteristics
(T_CASE = 25 °C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V_(BR)DSS
Drain-source breakdown
voltage
I_D = 250 µA, V_GS = 0
55
V
I_DSS
Zero gate voltage drain
current (V_GS = 0)
V_DS = max rating
V_DS = max rating@125 °C
1 µA
10 µA
I_GSS
Gate body leakage current
(V_DS = 0)
V_GS = ±20 V
±100 nA
V_GS(th) Gate threshold voltage
V_DS = V_GS, I_D = 250 µA
2
3
4
V
R_DS(on)
Static drain-source on
resistance
V_GS = 10 V, I_D = 40 A
0.0065 0.008 Ω
Table 6.
Symbol
Dynamic
Parameter
Test conditions
g_fs ⁽¹⁾ Forward transconductance V_DS =15 V , I_D = 18 A
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS = 25 V, f = 1 MHz,
V_GS= 0
Q_{g Total gate charge}
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD= 27 V, I_D = 80 A
V_GS =10 V
(see Figure 14)
1. Pulsed: pulse duration=300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
40
S
3740
pF
830
pF
265
pF
112 155 nC
20
nC
40
nC
Table 7. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
V_DD = 27 V, I_D = 40 A
R_G = 4.7 Ω V_GS = 10 V
(see Figure 13)
Min. Typ. Max. Unit
20
ns
110
ns
75
ns
35
ns
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Doc ID 14511 Rev 2