STB80NF10_09 Datasheet, PDF (5/14 Pages) STMicroelectronics – N-channel 100 V, 0.012 Ω, 80 A, TO-220, D2PAK low gate charge STripFET™ II Power MOSFET

STB80NF10, STP80NF10
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
I_SD
I_SDM(1)
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1. Pulse width limited by safe operating area
2. Pulse duration=300µs, duty cycle 1.5%
Test conditions
I_SD = 80 A, V_GS = 0
I_SD=80 A, V_DD = 50 V
di/dt = 100 A/µs,
T_j=150 °C
Min. Typ. Max Unit
-
80 A
-
320 A
-
1.3 V
106
ns
- 450
nC
8.5
A
Doc ID 6958 Rev 18
5/14