STB80NF10_09 Datasheet, PDF (4/14 Pages) STMicroelectronics – N-channel 100 V, 0.012 Ω, 80 A, TO-220, D2PAK low gate charge STripFET™ II Power MOSFET

Electrical characteristics
2
Electrical characteristics
STB80NF10, STP80NF10
(T_CASE=25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Drain-source
V_{(BR)DSS breakdown voltage}
I_DSS
I_GSS
V_GS(th)
R_DS(on)
Zero gate voltage
drain current (V_GS = 0)
Gate-body leakage
current (V_DS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
I_D = 250 µA, V_GS = 0
100
V
V_DS = Max rating
V_DS = Max rating @125°C
500 nA
10 µA
V_GS = ±20 V
±100 nA
V_DS = V_GS, I_D = 250 µA
2
3
4
V
V_GS = 10 V, I_D = 40 A
0.012 0.015 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
g_fs ⁽¹⁾
C_iss
C_oss
C_rss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS = 25 V _, I_D =40 A
V_DS = 25 V, f = 1 MHz,
V_GS = 0
Q_g Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD = 50 V, I_D = 80 A,
V_GS = 10 V
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min.
-
Typ.
50
Max. Unit
S
5500
pF
-
700
pF
175
pF
135 182 nC
-
23
nC
51.3
nC
Table 6. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
V_DD = 50 V, I_D= 40 A,
R_G = 4.7 Ω, V_GS=10 V
(see Figure 15)
Min. Typ.
26
80
-
116
60
Max. Unit
ns
ns
-
ns
ns
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Doc ID 6958 Rev 18