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STB80NF10_09 Datasheet, PDF (1/14 Pages) STMicroelectronics – N-channel 100 V, 0.012 Ω, 80 A, TO-220, D2PAK low gate charge STripFET™ II Power MOSFET
STB80NF10
STP80NF10
N-channel 100 V, 0.012 Ω, 80 A, TO-220, D2PAK
low gate charge STripFET™ II Power MOSFET
Features
Type
STP80NF10
STB80NF10
VDSS
100 V
100 V
RDS(on)
max
< 0.015 Ω
< 0.015 Ω
■ Exceptional dv/dt capability
■ 100% Avalanche tested
■ Application oriented characterization
ID
80 A
80 A
Applications
■ Switching applications
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency isolated DC-DC converters for telecom
and computer application. It is also intended for
any application with low gate charge drive
requirements.
3
2
1
TO-220
3
1
D²PAK
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STP80NF10
P80NF10@
STB80NF10T4
B80NF10@
Package
TO-220
D²PAK
Packaging
Tube
Tape and reel
April 2009
Doc ID 6958 Rev 18
1/14
www.st.com
14