STB80NF10 Datasheet, PDF (5/14 Pages) STMicroelectronics – N-channel 100V - 0.012OHM - 80A - TO-220 / D2PAK Low gate charge STRIPFET TM II Power MOSFET

STP80NF10 - STB80NF10
Electrical characteristics
Table 5. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
V_DD = 50V, I_D= 40A,
R_G = 4.7Ω, V_GS=10V
(see Figure 14)
Min. Typ. Max. Unit
26
ns
80
ns
116
ns
60
ns
Table 6. Source drain diode
Symbol
Parameter
Test conditions
Min Typ. Max Unit
I_SD
I_SDM(1)
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 80A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD=80A, V_DD = 50V
di/dt = 100A/µs,T_j=150°C
1. Pulse width limited by safe operating area
2. Pulsed:pulse duration=300µs, duty cycle 1.5%
80 A
320 A
1.3 V
106
ns
450
nC
8.5
A
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