STB80NF10 Datasheet, PDF (3/14 Pages) STMicroelectronics – N-channel 100V - 0.012OHM - 80A - TO-220 / D2PAK Low gate charge STRIPFET TM II Power MOSFET

STP80NF10 - STB80NF10
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
V_DS
V_GS
I_D(1)
I_D ⁽¹⁾
I_DM(2)
P_TOT
dv/dt ⁽³⁾
E_AS(4)
T_stg
Tj
Drain-source voltage (V_GS = 0)
Gate- source voltage
Drain current (continuous) at T_C = 25°C
Drain current (continuous) at T_C = 100°C
Drain current (pulsed)
Total dissipation at T_C = 25°C
Derating factor
Peak diode recovery voltage slope
Single pulse avalanche energy
Storage temperature
Operating junction temperature
1. Limited by package
2. Pulse width limited by safe operating area
3. I_SD < 80A, di/dt < 300A/µs, V_DD= 80 % V_(BR)DSS
4. Starting Tj = 25°C, I_D = 80A, V_DD = 50V
Table 2. Thermal resistance
Symbol
Parameter
Rthj-case
Rthj-amb
T_l
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering purpose
Electrical ratings
Value
100
±20
80
80
320
300
2
7
350
-55 to 175
Unit
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
Value
0.5
62.5
300
Unit
°C/W
°C/W
°C
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